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This means that every time you visit this website you will need to enable or disable cookies again.Download Tables of equivalences – SMD components – transistors and diodes 0.95+0.1
Note : The diode connected between the gate and
RDS(ON)= 20mΩ (typ.) Power Management in Notebook Computer,
36V
1 Source 5 Drain
S
High power and current handing capability. @ VGS =-4.5V
3 Source
Reliable and Rugged S
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S
S
6 Drain
The WTK9431 provide the designer with tAO4312
1.50 0.15
D
DRAIN CURRENT
CEM4311
Transistor-Array (Tabelle mit Klick auf Überschrift sortierbar) Bezeichnung Package U CE /V I C /A β (Beta) P tot /W f T /MHz Bemerkung Lieferant Datenblatt ca. Enhancement Mode MOSFET
D D D D
General Description Product Summary
minimized due to an extremely low combination of
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thanks .hello phelese may i hellp me i need forsmagour decod of the 3 leg transesto with code nambericnt say eny thing because iam not see eny thing yetRead more: Download Tables of equivalences – SMD components – transistors and diodes | Xtronic Free Electronic Circuits and Informations Part Number reference on SMD type 3SK318 Dual Gate FET, please?Hi.I need SMD transistors code for selection.thanksWe are using cookies to give you the best experience on our website.You can find out more about which cookies we are using or switch them off in This website uses cookies so that we can provide you with the best user experience possible. Halogen-Free Product
SO-8
+0.05
D
??? Applications
G
2 Source
P-Channel Enhancement Mode MOSFET
3 Source
RDS(ON) = 24mΩ(typ.) DS(ON)
D
VDS
?
P-Channel Enhancement Mode Field Effect Transistor
S S S
PAPM4431K
DS(ON)
Unit: mm
▼ Simple Drive Requirement RDS(ON) 24mΩ
6 Drain
Reliable and Rugged
C3866 TRANSISTOR PDF - C Datasheet PDF - NPN Power Transistors - SavantIC, C datasheet, C pdf, C pinout, data, circuit, C equivalent.
D
VKA 37 V
SMD Type MOSFET
@ VGS = -10V
G
? ▼ RoHS Compliant & Halogen-Free
S
-30V, -9.3A, RDS(ON) = 18m? ? frequency switching performance.Power losses are
SOP-8
? Follow us on social media. General Purpose Transistors Technical Data and Comparison Tables Previous.
DESCRIPTION&SYMBOL
MAXIMUM RATINGS
-3.5 AMPERES
D G
SOP-8
D
uniquely optimized to provide the most efficient high
G
● ID = 27 A (VGS = 10V)
RDS(ON) (at VGS=10V) < 6mΩ
● RDS(ON) ＜ 6.2mΩ (VGS = 4.5V)
@ VGS =-10V
Features Pin Description
RDS(ON) and Crss.In addiAO4314
N-Channel MOSFET
? FEATURES
G
Super High Dense Cell Design
Reliable and Rugged
?WTK9431
Equivalent Circuit D G S Source Gate Protection Diode Drain ESD PROTECTED TO 3kV 34P = Product Type Marking Code YW = Date Code Marking Y = Year (ex: W = 2009) W = Week (ex: A ~ Z = Weeks 1 ~ …
Super high dense cell design for extremely low RDS(ON). * Lower On-resistance
S
1 Source 5 Drain
● ID = 20 A (VGS = 10V)
G
N-Channel MOSFET
Reliable and Rugged
• Power Management in Notebook Computer,
RDS(ON)=32mΩ (typ.) Top View of SOP-8
RDS(ON) = 30m? S S S
(RoHS Compliant)
Parameter Symbol Rating Unit
* R <180m? Power Management in Notebook Computer,
Guilin Strong Micro-Electronics Co.,Ltd.
ID (at VGS=10V) 23A
SOP-8
How to use the SMD Codebook To identify a particular SMD device, first identify the package style and note the ID code printed on the device.
6 Drain
¦MAXIMUM RATINGS ????? Advanced Power MOSFETs from APEC provide the
D
1
@ VGS=-10V
S
+0.1
Top View of SOP-8
S S S
P-Channel Enhancement Mode MOSFET
RDS(ON) = 30m? Lead Free Available (RoHS Compliant)
Tags datasheet, Download, PDF, transistor. ● VDS (V) = 36V
D D D D
■ Absolute Maximum Ratings Ta = 25℃
Lead Free and Green Devices Available S
* Cell design for low RDS(ON)
(1, 2, 3)
● VDS (V) = 36V
Description
■ Features
ID (at VGS=10V) 20A
minimized due to an extremely low combination of
D
● VDS (V) = 36V
D
TO-251 & TO-252 package. Cookie information is stored in your browser and performs functions such as recognising you when you return to our website and helping our team to understand which sections of the website you find most interesting and useful.Strictly Necessary Cookie should be enabled at all times so that we can save your preferences for cookie settings.If you disable this cookie, we will not be able to save your preferences. 7 Drain
D
Unfortunately, each device code is not necessarily unique. G
Parameter Symbol Rating Unit
( 1, 2, 3 )
G
431 Transistor Equivalent Substitute - Cross-Reference Search 431 Datasheet (PDF) 1.1. rt1n431c rt1n431m rt1n431s rt1n431u.pdf Size:153K _update 〈Transistor〉 RT1N431X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT：mm RT1N431X is a one chip transistor RT1N431C with built-in bias resistor,PNP type is …
4 Gate
-30V/-9A,
36 ????????? designer with the best combination of fast switching,
Description:
Cathode to Anode Voltage
Reliable and Rugged
Super High Dense Cell Design
The AO4312 uses trench MOSFET technology that is
D
S
* Super high dense
CED SERIES
( 5,6,7,8 )
uniquely optimized to provide the most efficient high
■ Absolute Maximum Ratings Ta = 25℃
D
frequency switching performance.Power losses are